? 2008 ixys corporation, all rights reserved ds99896a (04/08) v dss = 1200v i d25 = 16a r ds(on) 950 m t rr 300 ns n-channel enhancement mode avalanche rated fast intrinsic diode features z international standard packages z fast recovery diode z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1200 v v dgr t j = 25 c to 150 c, r gs = 1m 1200 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c16a i dm t c = 25 c, pulse width limited by t jm 35 a i a t c = 25 c8a e as t c = 25 c 800 mj dv/dt i s i dm , v dd v dss ,t j 150 c 15 v/ns p d t c = 25 c 660 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c m d mounting torque (to-247) 1.13 / 10 nm/lb.in. weight to-247 6 g to-268 5 g IXFH16N120P ixft16n120p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 1200 v v gs(th) v ds = v gs , i d = 1ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss 25 a v gs = 0v t j = 125 c 2.5 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 950 m polar tm power mosfet hiperfet tm g = gate d = drain s = source tab = drain to-268 (ixft) g s tab tab to-247 (ixfh) applications: z high voltage switched-mode and resonant-mode power supplies z high voltage pulse power applications z high voltage discharge circuits in lasers pulsers, spark igniters, rf generators z high voltage dc-dc converters z high voltage dc-ac inverters
ixys reserves the right to change limits, test conditions, and dimensions. IXFH16N120P ixft16n120p ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 (ixfh) outline note 1: pulse test, t 300 s; duty cycle, d 2%. to-268 outline symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 7 11 s c iss 6900 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 390 pf c rss 48 pf r gi gate input resistance 1.4 t d(on) 35 ns t r resistive switching times 28 ns t d(off) v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 66 ns t f r g = 2 (external) 35 ns q g(on) 120 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 37 nc q gd 47 nc r thjc 0.19 c /w r thcs (to-247) 0.21 c /w source-drain diode characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 16 a i sm repetitive, pulse width limited by t jm 64 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm 0.75 c i rm 7.5 a i f = 8a, -di/dt = 100a/ s v r = 100v, v gs = 0v
? 2008 ixys corporation, all rights reserved IXFH16N120P ixft16n120p fig. 1. output characteristics @ 25oc 0 2 4 6 8 10 12 14 16 0246810121416 v ds - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 2. extended output characteristics @ 25oc 0 2 4 6 8 10 12 14 16 18 20 22 24 26 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 8v 5v 6v 7v fig. 3. output characteristics @ 125oc 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 v ds - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 4. r ds(on) normalized to i d = 8a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -50-250 255075100125150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 8a i d = 16a fig. 5. r ds(on) normalized to i d = 8a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 2 4 6 8 101214161820222426 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFH16N120P ixft16n120p ixys ref: f_16n120p(85) 04-03-08-a fig. 7. input admittance 0 2 4 6 8 10 12 14 16 3.54.04.55.05.56.06.57.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 2 4 6 8 10 12 14 16 18 0246810121416 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 5 10 15 20 25 30 35 40 45 50 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090100110120130 q g - nanocoulombs v gs - volts v ds = 600v i d = 8a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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